1/8 may 2003 . STT4PF20V p-channel 20v - 0.090 w - 3a sot23-6l 2.7v-drive stripfet? ii power mosfet n typical r ds (on) = 0.090 w @ 4.5 v n typical r ds (on) = 0.100 w @ 2.7 v n ultra low threshold gate drive (2.7 v) n standard outline for easy automated surface mount assembly description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n mobile phone applications n dc-dc converters n battery management in nomadic equipment type v dss r ds(on) i d STT4PF20V 20 v < 0.11 w ( @ 4.5 v ) < 0.135 w ( @ 2.7 v ) 3 a sot23-6l absolute maximum ratings ( ) pulse width limited by safe operating area. note: for the p-channel mosfet actual polarity of voltages and current has to be reversed symbol parameter value unit v ds drain-source voltage (v gs = 0) 20 v v dgr drain-gate voltage (r gs = 20 k w ) 20 v v gs gate- source voltage 10 v i d drain current (continuous) at t c = 25c 3a i d drain current (continuous) at t c = 100c 1.9 a i dm ( ) drain current (pulsed) 12 a p tot total dissipation at t c = 25c 1.6 w internal schematic diagram www.datasheet.co.kr datasheet pdf - http://www..net/
STT4PF20V 2/8 thermal data (*) when mounted on 1 inch 2 fr-4 board, 2 oz of cu and t [ 10 sec. electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-amb t j t stg (*) thermal resistance junction-ambient maximum operating junction temperature storage temperature max 78 150 -55 to 150 c/w c c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 10v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 0.6 v r ds(on) static drain-source on resistance v gs = 4.5 v i d = 1.5 a v gs = 2.7 v i d = 1.5 a 0.090 0.100 0.110 0.135 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds =15v i d =1.5 a 6.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15v, f = 1 mhz, v gs = 0 500 140 30 pf pf pf www.datasheet.co.kr datasheet pdf - http://www..net/
3/8 STT4PF20V switching on (* ) switching off (* ) source drain diode (* ) (*) pulse width [ 300 s, duty cycle 1.5 %. ( ) pulse width limited by t jmax symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 10 v i d = 1.5 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 1) 38 39 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10v i d = 3a v gs =4.5v (see test circuit, figure 2) 5.8 1 1.4 7.8 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 1.5 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 1) 54 12 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 3 12 a a v sd (*) forward on voltage i sd = 3 a v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3 a di/dt = 100a/s v dd = 15 v t j = 150c (inductive load, figure 3) 20 13 1.3 ns nc a electrical characteristics (continued) safe operating area thermal impedance www.datasheet.co.kr datasheet pdf - http://www..net/
STT4PF20V 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations www.datasheet.co.kr datasheet pdf - http://www..net/
5/8 STT4PF20V normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature . . www.datasheet.co.kr datasheet pdf - http://www..net/
STT4PF20V 6/8 fig. 2: gate charge test circuit fig. 3: test circuit for diode recovery behaviour fig. 1: switching times test circuits for resistive load www.datasheet.co.kr datasheet pdf - http://www..net/
7/8 STT4PF20V dim. mm mils min. typ. max. min. typ. max. a 0.90 1.45 0.035 0.057 a1 0.00 0.15 0.000 0.006 a2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 c 0.09 0.20 0.004 0.008 d 2.80 3.10 0.110 0.122 e 2.60 3.00 0.102 0.118 e1 1.50 1.75 0.059 0.069 l 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 aa2 a1 b e e1 c e l d e1 sot23-6l mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
STT4PF20V 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2003 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/
|
